Indium-doped ZnO horizontal nanorods for high on-current field effect transistors
نویسندگان
چکیده
منابع مشابه
Lateral growth of ZnO nanorod arrays in polyhedral structures for high on-current field-effect transistors.
Lateral growth of one-dimensional nanostructures is crucial for high performance field-effect transistors (FETs) which can drive a high on-current that is proportional to the number of nanorods (NRs) aligned between electrodes. Hence, it is strongly required to laterally and directly grow a large number of NRs between electrodes. For the first time, we propose a polyhedral-type FET (PH-FET) bas...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2017
ISSN: 2046-2069
DOI: 10.1039/c7ra09105b